?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs 43a, 1200v, npt series n-channel igbt the hgtg11N120CN, hgtp11N120CN, and hgt1s11N120CNs are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. igbts combine the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on- state conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49291. symbol features ? 43a, 1200v, t c = 25 o c 1200v switching soa capability typical fall time. . . . . . . . . . . . . . . . 340ns at t j = 150 o c short circuit rating low conduction loss avalanche rated thermal impedance spice model temperature compensating saber? model www.fairchildsemi.com related literature - tb334 ?guidelines for soldering surface mount components to pc boards? packaging jedec style to-247 jedec to-220ab (alternate version) jedec to-263ab ordering information part number package brand hgtg11N120CN to-247 g11N120CN hgtp11N120CN to-220ab 11N120CN hgt1s11N120CNs to-263ab 11N120CN note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in t ape and reel, i.e., hgt1s11N120CNs9a. c e g g c e collector (bottom side metal) g collector e (flange) c g collector e (flange) fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified hgtg11N120CN hgtp11N120CN hgt1s11N120CNs units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 1200 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 43 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 22 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 80 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 55a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 298 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 w/ o c forward voltage avalanche energy (note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e av 80 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 300 o c package body for 10s, see tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 260 o c short circuit withstand time (note 3) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 8 s short circuit withstand time (note 3) at v ge = 12v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 15 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. i ce = 20a, l = 400 h, t j = 25 o c. 3. v ce(pk) = 840v, t j = 125 o c, r g = 10 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 1200 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i ces v ce = 1200v t c = 25 o c - - 250 a t c = 125 o c - 250 - a t c = 150 o c--3ma collector to emitter saturation voltage v ce(sat) i c = 11a, v ge = 15v t c = 25 o c-2.12.4v t c = 150 o c-2.83.5v gate to emitter threshold voltage v ge(th) i c = 90 a, v ce = v ge 6.0 6.8 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 10 ?, v ge = 15v, l = 400 h, v ce(pk) = 1200v 55 - - a gate to emitter plateau voltage v gep i c = 11a, v ce = 600v - 10.4 - v on-state gate charge q g(on) i c = 11a, v ce = 600v v ge = 15v - 100 120 nc v ge = 20v - 130 150 nc hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 11a v ce = 960v v ge = 15v r g = 10 ? l = 2mh test circuit (figure 18) -2326ns current rise time t ri -1216ns current turn-off delay time t d(off)i - 180 240 ns current fall time t fi - 190 230 ns turn-on energy (note 4) e on1 -0.40.5mj turn-on energy (note 4) e on2 -0.951.3 mj turn-off energy (note 5) e off -1.31.6mj current turn-on delay time t d(on)i igbt and diode at t j = 150 o c i ce = 11a v ce = 960v v ge = 15v r g = 10 ? l = 2mh test circuit (figure 18) -2124ns current rise time t ri -1216ns current turn-off delay time t d(off)i - 210 280 ns current fall time t fi - 340 400 ns turn-on energy (note 4) e on1 -0.450.6 mj turn-on energy (note 4) e on2 -1.92.5mj turn-off energy (note 5) e off -2.12.5mj thermal resistance junction to case r jc - - 0.42 o c/w notes: 4. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 18. 5. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per je dec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method p roduces the true total turn-off energy loss. typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units t c , case temperature ( o c) i ce , dc collector current (a) 50 0 40 10 25 75 100 125 15 0 30 35 25 15 5 v ge = 15v 20 45 v ce , collector to emitter voltage (v) 140 0 40 0 i ce , collector to emitter current (a) 10 20 600 800 400 200 1000 1200 0 50 60 30 t j = 150 o c, r g = 10 ? , v ge = 15v, l = 400 h hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t j = 150 o c, r g = 10 ? , l = 2mh, v ce = 960v f max , operating frequency (khz) 2 5 10 2 0 10 50 5 100 f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.42 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c = 75 o c, v ge = 15v, ideal diode t c v ge 110 o c 12v 15v 15v 75 o c 110 o c 75 o c 12v 200 v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 12 13 14 15 16 5 10 15 20 50 100 150 250 t sc i sc 25 200 v ce = 840v, r g = 10 ? , t j = 125 o c 024 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 6 8 30 50 250 s pulse test duty cycle < 0.5%, v ge = 12v t c = -55 o c t c = 25 o c t c = 150 o c 40 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 30 40 02468 10 50 0 t c = -55 o c t c = 25 o c t c = 150 o c duty cycle < 0.5%, v ge = 15v 250 s pulse test e on2 , turn-on energy loss (mj) 4 i ce , collector to emitter current (a) 3 2 5 0 5 10 0 15 2 0 t j = 25 o c, v ge = 12v, v ge = 15v r g = 10 ? , l = 2mh, v ce = 960v 1 t j = 150 o c, v ge = 12v, v ge = 15v 2.5 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 0 5 0 0.5 1.5 1.0 2.0 3.0 3.5 10 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v 15 2 0 hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. fall vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 0 15 20 25 30 35 5 40 15 2 0 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 15v 10 t j = 25 o c, t j = 150 o c, v ge = 12v i ce , collector to emitter current (a) t ri , rise time (ns) 0 10 30 20 15 010 52 0 40 50 r g = 10 ? , l = 2mh, v ce = 960v t j = 25 o c or t j = 150 o c, v ge = 15v t j = 25 o c, t j = 150 o c, v ge = 12v 0 250 5 100 200 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 500 350 400 2 0 15 r g = 10 ? , l = 2mh, v ce = 960v 10 v ge = 12v, v ge = 15v, t j = 25 o c v ge = 12v, v ge = 15v, t j = 150 o c 150 450 300 i ce , collector to emitter current (a) t fi , fall time (ns) 0 100 300 400 5 500 700 2 0 15 r g = 10 ? , l = 2mh, v ce = 960v 200 600 10 t j = 25 o c, v ge = 12v or 15v t j = 150 o c, v ge = 12v or 15v i ce , collector to emitter current (a) 0 40 13 8910 12 v ge , gate to emitter voltage (v) 11 60 80 14 1 5 100 t c = 25 o c t c = 150 o c t c = -55 o c 250 s pulse test duty cycle < 0.5%, v ce = 20v 7 20 v ge , gate to emitter voltage (v) q g , gate charge (nc) 5 20 0 060 20 80 v ce = 800v i g(ref) = 1ma, r l = 54.5 ? , t c = 25 o c v ce = 1200v 10 15 12 0 v ce = 400v 100 40 hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b figure 15. capacitance vs collector to emitter voltage figure 16. collector to emitter on-state voltage figure 17. normalized transient thermal response, junction to case typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) c res 0 5 10 15 20 2 5 0 1 c ies c oes 3 4 frequency = 1mhz 2 i ce , collector to emitter current (a ) v ce , collector to emitter voltage (v) 3 12 01 0 2 15 duty cycle < 0.5%, t c = 110 o c 250 s pulse test 9 6 3 4 v ge = 10v v ge = 15v t 1 t 2 p d single pulse 0.5 0.2 0.1 0.05 0.02 t 1 , rectangular pulse duration (s) 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c z jc , normalized thermal response 0.01 test circuit and waveforms figure 18. inductive switching test circui t figure 19. switching test waveforms r g = 10 ? l = 2mh v dd = 960v + - hgtg11N120CNd t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
?2001 fairchild semiconductor corporation hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or floating should be avoided. these conditions can result in turn-on of the d evice due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 19. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 19. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instant aneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtg11N120CN, hgtp11N120CN, hgt1s11N120CNs
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